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  sangdest microelectronics technical data green products data sheet n0884 rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113  (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sangdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? SB10150 SB10150 schottky rectifier applications: ? disk drives ? switching power supply ? converters ? free-wheeling diodes ? reverse battery protection ? battery charging features: ? small foot print, surface moutable ? low forward voltage drop ? high frequency operation ? guard ring for enhanced ruggedne ss and long term reliability ? this is a pb ? free device ? all smc parts are traceable to the wafer lot ? additional testing can be offered upon request mechanical dimensions: in inches / mm do-201ad
sangdest microelectronics technical data green products data sheet n0884 rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113  (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sangdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? SB10150 marking diagram: where xxxxx is yywwl sb = device type 10 = forward current (10a) 150 = reverse voltage (150v) ssg = ssg yy = year ww = week l = lot number cautions molding resin epoxy resin ul:94v-0 ordering information: device package shipping SB10150 do-201ad (pb-free) 1250pcs / tape for information on tape and reel specificat ions, including part orientation and tape si zes, please refer to our tape and reel p ackaging specification.
sangdest microelectronics technical data green products data sheet n0884 rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113  (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sangdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? SB10150 maximum ratings and el ectrical characteristics @t a =25c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol SB10150 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 150 v maximum rms voltage v rms 105 v average rectified output current (note 1) @t a = 75c i f(av) 10 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 200 a forward voltage @i f = 10a,t a = 25c @i f = 10a,t a = 1 25c v fm 1.05 0.90 v peak reverse current @t a = 25c at rated dc blocking voltage @t a = 125c i rm 1 7 ma typical thermal resistance junction to ambient r ja 10 c /w storage temperature range t j, t stg -50 to +150 c approximate weight wt 1.02 g case style do-201ad note: 1. leads maintained at ambient temperature at a distance of 9.5mm from the case.
sangdest microelectronics technical data green products data sheet n0884 rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113  (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sangdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? SB10150 disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change without prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the smc - san gdest microelectronics (nanjing) co., ltd sale s department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users? fail-safe prec autions or other arrangement . 3- in no event shall smc - sangdest microel ectronics (nanjing) co., ltd be liable for any damages that may result from an accid ent or any other cause during operation of the us er?s units according to the datasheet(s). smc - sangdest microelectronics (nanjing) c o., ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of infor mation, products or circuits descr ibed in the datasheets. 4- in no event shall smc - sangdest microel ectronics (nanjing) co., ltd be liable for an y failure in a semiconductor device or any secondary damage resulting from use at a va lue exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or smc - sangdest microelectr onics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplicated, in any form , in whole or part, without the expressed written permissio n of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technol ogies), the necessary procedures are to be taken in accordance with related laws a nd regulations..


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